S20: Device and Module Packaging
Wednesday, October 14, 2020
9:35 AM - 10:05 AM

Presentations and Authors:

1. High Power Density 1700-V/ 300-A Si-IGBT and SiC-MOSFET Hybrid Switch-Based Half-Bridge Power Module (Amol Deshpande, Asif Imran, Riya Paul, Zhao Yuan, Hongwu Peng, Fang Luo)

2. Low-Inductance Double-Sided Cooling Power Module with Branched Lead Frame Terminals for EV Traction Inverter (Takeshi Tokuyama, Akira Mima, Yusuke Takagi, Akira Matsushita)

3. Design of a Low Multi-Loop Inductance Three Level Neutral Point Clamped Inverter with GaN HEMTs (Eduard Dechant, Norbert Seliger, Ralph Kennel)

4. A 16 kV PCB-Based DC-Bus Distributed Capacitor Array with Integrated Power-AC-Terminal for 10 kV SiC MOSFET Modules in Medium-Voltage Inverter Applications (Lakshmi Ravi, Xiang Lin, Dong Dong, Rolando Burgos)

5. Applying GaN HEMTs in Conventional Housing-Type Power Modules (Lei Kou, Juncheng Lu)

6. Chip Metallization Aging Monitoring with Induced Voltage veE between Kelvin and Power Emitter for High Power IGBT Modules (Yu Chen, Fanxu Meng, Ankang Zhu, Wuhua Li, Xiangning He)

7. Fourier Analysis-Based Evolutionary Multi-Objective Multiphysics Optimization of Liquid-Cooled Heat Sinks (Raj Sahu, Emre Gurpinar, Burak Ozpineci)

8. Reliability Enhancement of Power Modules by Restricting Junction Temperature Fluctuation through Increased Transient Thermal Capacity (Xin Fang, Huaping Jiang, Xiaoyong Wang, Weihua Shao, Hai Ren, Li Ran, Hengchun Mao)

Sessions (On-Demand with Live Q&A Sessions)