Name
S4: Wide-bandgap Semiconductors 1
Date
Monday, October 12, 2020
Time
11:00 AM - 11:30 AM
Description


Presentations and Authors:

1. Comparison of Medium-Voltage Oscilloscope Probes for Evaluating Silicon-Carbide Multi-Chip Power Modules (Christopher D. New, Andrew N. Lemmon, Brian T. DeBoi, Jared C. Helton, Blake W. Nelson)

2. A Physical Investigation of Large-Signal Dynamic Output Capacitance and Energy Loss in GaN-on-Si Power HEMTs at High-Frequency Applications (Jia Zhuang, Grayson Zulauf, Jaume Roig, James D. Plummer, Juan Rivas-Davila)

3. Characterization and Analysis of Insulated Metal Substrate-Based SiC Power Module for Traction Application (Shajjad Chowdhury, Emre Gurpinar, Burak Ozpineci)

4. An Intelligent Three-Level Active Gate Driver for Crosstalk Suppression of SiC MOSFET (Zhidong Qiu, Hong Li, Yanfeng Jiang, Tiancong Shao, Zhichang Yang, Jiaxin Wang, Zhipeng Zhang)

5. A 500kW Forced-Air-Cooled Silicon Carbide (SiC) 3-Phase DC/AC Converter with a Power Density of 1.246MW/m3 and Efficiency >98.5% (Yan Li, Yonglei Zhang, Xibo Yuan, Lei Zhang, Fei Ye, Zhe Li, Yaohua Li, Yipu Xu, Zijian Wang)

6. Characterizing Threshold Voltage Shifts and Recovery in Schottky Gate and Ohmic Gate GaN HEMTs (Jose Ortiz Gonzalez, Burhan Etoz, Olayiwola Alatise)

7. Impact of Parasitics and Load Current on the Switching Transient Time and Motor Terminal Overvoltage in SiC-Based Drives (Wenzhi Zhou, Mohamed S. Diab, Xibo Yuan)

8. 3D Commutation-Loop Design Methodology for a Silicon-Carbide based 15 kW, 380:480 V Matrix Converter with PCB Aluminum Nitride Cooling Inlay (Victoria Baker, Boran Fan, Rolando Burgos, Vladimir Blasko, Warren Chen)

9. Performance of Wide-Bandgap Gallium Nitride vs Silicon Carbide Cascode Transistors (Yasin Gunaydin, Saeed Jahdi, Olayiwola Alatise, Jose Ortiz Gonzalez, Ruizhu Wu, Bernard Stark, Mohammad Hedayati, Xibo Yuan, Phil Mellor)

Category
Sessions (On-Demand with Live Q&A Sessions)